Search results for "beam [charged particle]"

showing 10 items of 686 documents

Investigation of ISIS and Brookhaven National Laboratory ion source electrodes after extended operation.

2012

Linac4 accelerator of Centre Européen de Recherches Nucléaires is under construction and a RFdriven H− ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. Cesiated plasma discharge ion sources such as Penning or magnetron sources are also potential candidates. Accelerator ion sources must achieve typical reliability figures of 95% and above. Investigating and understanding the underlying mechanisms involved with source failure or ageing is critical when selecting the ion source technology. Plasma discharge driven surface ion sources rely on molybdenum cathodes. Deformation of the cathode surfaces is visible after extended opera…

Materials scienceNuclear engineeringchemistry.chemical_elementnegative ionsLinear particle acceleratorIonlaw.inventionion sourceslawSputteringPenning dischargesInstrumentationlinear acceleratorsplasma sourcesta114Particle acceleratorIon sourceCathodeplasma transport processesAnodechemistryparticle beam extractionMolybdenumAtomic physicssputteringmolybdeeniThe Review of scientific instruments
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The role of impurities in the irradiation induced densification of amorphous SiO(2).

2011

In a recent work (Buscarino et al 2009 Phys. Rev. B 80 094202), by studying the properties of the (29)Si hyperfine structure of the E'(γ) point defect, we have proposed a model able to describe quantitatively the densification process taking place upon electron irradiation in amorphous SiO(2) (a-SiO(2)). In particular, we have shown that it proceeds heterogeneously, through the nucleation of confined densified regions statistically dispersed into the whole volume of the material. In the present experimental investigation, by using a similar approach on a wider set of materials, we explore how this process is influenced by impurities, such as OH and Cl, typically involved in relevant concent…

Materials scienceNucleationCondensed Matter PhysicsCrystallographic defectAmorphous solidlaw.inventionChemical engineeringImpuritylawamorphous silicon dioxide sio2 irradiation effects electron irradiation point defects electron paramagnetic resonance densityElectron beam processingGeneral Materials ScienceIrradiationElectron paramagnetic resonanceHyperfine structureJournal of physics. Condensed matter : an Institute of Physics journal
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Induced attenuation in Ce3+ and Nd3+ doped fibers irradiated with electron beams under low dose regime

2005

Abstract In this paper, we study the feasibility of rare earth doped optical fibers as dosimeters based on the attenuation induced by electron beams under standard conditions in radiotherapy. Neodymium and cerium doped fibers have been irradiated with 10 MeV electrons, the radiation-induced loss and the dynamic response have been measured in the wavelength range 1200–1600 nm. The sensitivity of the fibers is of the order of 0.1 (dB/m)/Gy and has a linear dependence on the dose.

Materials scienceOptical fiberDosimeterbusiness.industryAttenuationPhysics::Medical PhysicsPhysics::Opticschemistry.chemical_elementRadiationNeodymiumAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materialslaw.inventionCeriumOpticschemistrylawElectron beam processingCondensed Matter::Strongly Correlated Electronssense organsIrradiationElectrical and Electronic EngineeringPhysical and Theoretical ChemistrybusinessOptics Communications
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Group birefringence cancellation in highly birefringent photonic crystal fibre at telecommunication wavelengths

2010

International audience; The spectral dependence of the group modal birefringence in a highly birefringent nonlinear photonic crystal fibre is studied both numerically and experimentally. The sign inversion and the cancellation of the group modal birefringence in the telecommunication window is demonstrated. Two simple experimental techniques are used to evaluate the wavelength of zero polarisation mode dispersion. The experimental results are in excellent agreement with numerical calculations based on vectorial beam propagation method simulations.

Materials scienceOptical fiberPhysics::Optics02 engineering and technology01 natural sciencesPhotonic crystal fibrelaw.invention010309 optics020210 optoelectronics & photonicsOpticsBeam propagation methodlaw0103 physical sciences0202 electrical engineering electronic engineering information engineeringNonlinear photonic crystalElectrical and Electronic EngineeringPhotonic crystal[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics][ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]Birefringencebusiness.industryWavelengthOptoelectronicsModal birefringencebusinessTelecommunications
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Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

2002

Multilayer structure containing vertically stacked InAs/InP self-assembled quantum wires have been successfully grown by molecular-beam epitaxy. The influence of the InP spacer layer thickness on the structural and optical properties of the wire superlattice has been studied by means of transmission electron microscopy and photoluminescence. The coherent propagation of the strain field in the sample with a 5-nm-thick spacer determines by a size filtering effect a good homogeneity and uniformity of the wire stacks, and hence a good optical quality. The exciton recombination dynamics in the wire superlattice cannot be related to thermal escape of carriers out to the barriers, as occurs in sin…

Materials sciencePhotoluminescenceCondensed matter physicsSuperlatticeExcitonQuantum wiresStackingPhysics::OpticsEpitaxyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials ScienceMolecular-beam epitaxyTransmission electron microscopyMultilayer structureHomogeneity (physics)ExcitonPhotoluminescenceMolecular beam epitaxy
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Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

2003

3 páginas, 2 figuras.-- PACS: 73.21.Hb; 78.55.Cr; 78.67.Lt.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.

Materials sciencePhotoluminescenceCondensed matter physicsbusiness.industryQuantum wiresPhysics::OpticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsLayer thicknessAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSelf assembledCondensed Matter::Materials ScienceHomogeneity (physics)Physics::Accelerator PhysicsOptoelectronicsVertical stacksbusinessQuantumPhotoluminescenceMolecular beam epitaxy
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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

2008

http://link.aip.org/link/?JAPIAU/103/056108/1

Materials sciencePhotoluminescenceSapphireSpectral line intensityCadmium compoundsIon platingAnalytical chemistryUNESCO::FÍSICASemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsEpitaxyAcceptorVapour phase epitaxial growthEtchingEtching (microfabrication):FÍSICA [UNESCO]Ion beam assisted depositionMOCVDSapphireCadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growthMetalorganic vapour phase epitaxyIon beam-assisted depositionPhotoluminescenceImpurities
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Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures

2012

Abstract After discussing the GaN NW nucleation issue, we will present the structural properties of axial and radial (i.e. core/shell) GaN/AlN NW heterostructures and adress the issue of critical thickness during the growth of such heterostructures. Next, we will present the growth of InGaN NWs on a GaN NW base. It will be shown that the morphology and structural properties of the InGaN NW sections depend on the In content: for high In content a flat top is observed and plastic relaxation is occuring, with mismatch dislocations formed at the InGaN/GaN interface. By contrast, for In content below 25% InGaN NWs exhibit a pencil-like shape assigned to a purely elastic strain relaxation process…

Materials sciencePhotoluminescencebusiness.industryRelaxation (NMR)NucleationNanowireShell (structure)HeterojunctionPhysics and Astronomy(all)Xrays diffractionsymbols.namesakenanowiresmolecular beam epitaxyRaman spectroscopysymbolsIII nitride wide gap semiconductorsOptoelectronicsphotoluminescencebusinessRaman spectroscopyhigh resolution electron microscopyMolecular beam epitaxyPhysics Procedia
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Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon

2003

Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…

Materials sciencePhysics and Astronomy (miscellaneous)Physics::Instrumentation and DetectorsGeneral Physics and AstronomyPhysics::OpticsGallium nitrideSubstrate (electronics)Light emitting diodeFILMSSettore ING-INF/01 - Elettronicalaw.inventionchemistry.chemical_compoundCondensed Matter::Materials ScienceOpticsEtching (microfabrication)lawDielectric mirrorDielectric mirrorQuantum wellbusiness.industryGeneral EngineeringMembraneGallium nitrideDistributed Bragg reflectorlight emitting diodesComputer Science::OtherchemistryOptoelectronicsWAVELASERbusinessMicrocavityMolecular beam epitaxyLight-emitting diodeMolecular beam epitaxySAPPHIRE
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Ion irradiation of carbon nanotubes encapsulating cobalt crystals

2008

Abstract The response of multi-walled carbon nanotubes encapsulating Co nanorods to ion irradiation was studied. The irradiation experiments with medium ion energies (40–500 keV) were carried out at high temperatures and combined with transmission electron microscopy and Raman characterization of the irradiated samples. Contrary to electron irradiation and high-energy (100 MeV) ion irradiation, we did not see accumulation of pressure inside irradiated nanotubes. We found that nanotubes with Co nanorods inside were transformed to amorphous carbon rods encapsulating Co clusters with typical diameters of 3–6 nm. As Co is magnetic, such one-dimensional composite systems could be used for variou…

Materials sciencePhysics::Instrumentation and DetectorsPhysics::Medical PhysicsNanotechnology02 engineering and technologyCarbon nanotube01 natural sciencesIonlaw.inventionCondensed Matter::Materials Sciencesymbols.namesakelaw0103 physical sciencesElectron beam processingIrradiation010306 general physics021001 nanoscience & nanotechnologyCondensed Matter PhysicsAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsAmorphous carbonChemical engineeringTransmission electron microscopysymbolsNanorod0210 nano-technologyRaman spectroscopyPhysica E: Low-dimensional Systems and Nanostructures
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